SiO2 Film Stress Distribution During Thermal Oxidation of Si.
Abstract
A laser reflection technique is used to investigate the relaxation of Silicon dioxide film stress which occurs during the dry thermal oxidation of Silicon between 700 and 1000 C. Included is a determination of the stress distribution in the oxide by two independent methods: 1) measurement on oxides of various thicknesses from 100 to 800 A, and 2) repeated stress measurements on chemically thinned SiO2 films, viz. etch back analysis toward the interface. Agreement is found between these experiments. These thin film stress measurements are achieved by the use of ultra-thin Si substrates 75 micrometers). Essentially, an increase in film stress with decreasing film thickness is observed. Rapid stress relaxation is observed for all temperatures studied and is attributed to a time-dependent oxide viscosity. The influence of these measured properties on the kinetics of Si oxidation is discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 03, 1987
- Accession Number
- ADA189552
Entities
People
- E. Kobeda
- Eugene A. Irene
Organizations
- University of North Carolina at Chapel Hill