Solid-State Travelling Wave Amplifiers Based on Multi-Stream Instability

Abstract

A method for the amplification of microwaves, based on the space- charge interaction of electron streaming sheets with different velocities in a semiconductor is obtained. A maximum of 18 dB gain in the 3-90 GHz band is predicted. Comparisons of MESFET, bipolar transistor, and state induction transistor Class C amplifiers show that silicon bipolar type is preferred. A completely new approach to the phenomenological quantal dissipation problem has been formulated and solved by Dirac's constrained dynamics. Boson operator, generalized to dissipative oscillator is also obtained.

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Document Details

Document Type
Technical Report
Publication Date
Nov 25, 1987
Accession Number
ADA189566

Entities

People

  • Yen-chu Wang

Organizations

  • Howard University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Bipolar Junction Transistors
  • Dynamics
  • Electronics
  • Electrons
  • Engineering
  • Microwaves
  • Numerical Analysis
  • Oscillators
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics
  • Space Charge
  • Transistors

Fields of Study

  • Physics

Readers

  • Electronics Engineering
  • Plasma Physics / Magnetohydrodynamics
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.

Technology Areas

  • Microelectronics
  • Space
  • Space - Hall-Effect Thruster