Gas Source MBE (Molecular Beam Epitaxy).

Abstract

This report describes the equipment acquired and the research performed under the DoD University Research Instrumentation Program grant for 'Gas Source MBE' at Colorado State University. The objective of the research supported by the grant is to grow epitaxial III-V semiconductor films using gaseous materials for molecular beam epitaxy (MBE). The grant provided the critical equipment items needed to customize the existing commercial MBE system and allow growth of heteroepitaxial structures that can not be fabricated by other techniques. The resulting gas source MBE materials could provide the optoelectronic device technology required for the high data rate signal processing of the vast quantities of input data expected in future DoD space and ground-based sensing systems. Keywords: Molecular beam epitaxy.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1987
Accession Number
ADA189763

Entities

People

  • Gary Y. Robinson

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Chemical Vapor Deposition
  • Detectors
  • Electrical Engineering
  • Engineering
  • Epitaxial Growth
  • Instrumentation
  • Materials
  • Measurement
  • Military Research
  • Modules (Electronics)
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Optoelectronic Devices
  • Quantum Wells
  • Semiconductors
  • Signal Processing

Fields of Study

  • Materials science

Readers

  • Distributed Systems and Data Platform Development
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Space