Beam Assisted Fabrication of III-V/Si Monolithic Devices.

Abstract

The objective of this research project is to explore two new methods for deposition of III-V semiconducting films on Silicon substrates. Using gas-source molecular beam epitaxy (MBE) and photon-beam and electron-beam assisted metal-organic chemical vapor deposition (MOCVD), Gallium Arsenide and other III-V films with abrupt heterojunctions are being formed epitaxially on Si, and by means of optical and electrical characterization the suitability of the resulting III-V/Si structures are being examined for use in monolithic devices.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 10, 1987
Accession Number
ADA189979

Entities

People

  • Gary Y. Robinson

Organizations

  • Colorado State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Brushless Dc Motors
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Diffraction
  • Electrical Properties
  • Electron Beams
  • Electronics Laboratories
  • Epitaxial Growth
  • Measurement
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Spectra
  • Surface Properties
  • Vapor Deposition
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene