Grain Boundary Diffusion in Oxides and Its Contribution to Oxidation Processes,
Abstract
Grain boundaries and dislocations are potential routes for rapid for (or short-circuit) diffusion in crystalline materials because there is usually greater disorder in the arrangement of atoms within these regions than in the bulk lattice. (Conversely, in materials which have highly disordered bulk lattices, grain boundaries and dislocations will not enhance transport; indeed, they may even reduce it.) The relative importance of short circuit transport, compared to bulk lattice transport, will generally be greater for lower temperatures, smaller grain sizes and materials which tend to contain low concentrations of lattice defects. These conditions are all found in oxide files growing on corrosion resistant alloys in service conditions. It is therefore to be expected that many of the key processes which involve material transport in oxide films will be controlled by short circuit diffusion along grain boundaries and/or dislocations.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1987
- Accession Number
- ADA190098
Entities
People
- A. Atkinson