Fundamental Properties and Devices Applications of Ge(x)Si(1-x)/Si Superlattices.
Abstract
The progress include (a) growth and characterization of GexSi(1-x)/Si epitaxial films and superlattices, (b) study of power loss by two dimensional holes in coherently strained GexSi(1-x)/Si heterostructures, (c) theoretical prediction of resonances of intraband absorption (d) study of B203 as a low temperature p-type dopant. Initial stage of growth of GexSi(1-x)/Si films were studied using reflection high energy electron diffraction (RHEED) and the superlattice structures were characterized using TEM. In the study of magnetotransport of holes in GexSi(1-x)/Si SLS's, we found that the power loss data can be well understood by taking into account the effects from the acoustic mode phonons by both the deformation potential and the piezoelectric coupling. The resonance nature of intraband absorption can be used for sensitive and tunable IR detector applications. The possibility of using B203 as an effective p-type doping source is demonstrated for providing abrupt doping profiles needed for GExSi(1-x)/Si superlattices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1987
- Accession Number
- ADA190129
Entities
People
- Kang L. Wang
Organizations
- University of California, Los Angeles