Generation of Tunable Coherent Radiation in 3 Micrometers-5 Micrometers Region Using Semiconductor Lasers in External Cavities.

Abstract

This report describes the first optically pumped mode-locked PbS(1-x)Se(x) semiconductor lasers with an external cavity with the following specifications: 1. Observed lasing as high as to 150K, 2. Operated CW mode-locked as low as temperature of 8K, 3. Maximum output average power was 1 mW at 4.1 micro m and 0.6 mw at 4.8 micro m, 4. Wavelength span from 4 micro m - 5 micro m possible, Keywords: Tunable infrared semiconductor lasers, Lead sulfides, Selenides.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1987
Accession Number
ADA190860

Entities

People

  • Michael M. Salour

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Coherent Radiation
  • Color Centers
  • Dye Lasers
  • Electronics Laboratories
  • Fermi Levels
  • Frequency Combs
  • Laser Applications
  • Laser Beams
  • Laser Diodes
  • Laser Resonators
  • Lasers
  • Light (Electromagnetic Radiation)
  • Optics
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Waveplates

Fields of Study

  • Engineering
  • Physics

Readers

  • Optical Physics and Photonics.

Technology Areas

  • Directed Energy
  • Microelectronics