Interface Characterization of Cu-Cu and Cu-Ag-Cu Low Temperature Solid State Bonds.

Abstract

In this study, Auger Electron Spectroscopy (AES), Scanning Electron Microscopy (SEM) and Energy Dispersive X ray (EDX) analysis have been used to characterize the interface regions of copper to silver and copper to copper bond samples in an effort to identify those parameters which most affect the bond characteristics. Longitudinal and transverse cross sections of the bond joint are examined. Auger electron sputter depth profiling was used to examine the interface properties and composition across the bond interface. Depth profiles indicate carbon and oxygen diffuse away from the interface during bonding facilitating adhesion. Tensile tests on bonded samples indicate that bond pressure has a more significant effect on bond strength than temperature. A temperature threshold for bonding is observed which is related to the ability of the bond materials to scavenge their oxides. Keywords: Interface characterization, Auger spectroscopy, Solid state bonding, Diffusion bonding, Scanning electron microscopy.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1987
Accession Number
ADA191015

Entities

People

  • Robert Z. Dalbey

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Adhesion
  • Auger Electrons
  • Chemistry
  • Copper
  • Diffusion Bonding
  • Electron Microscopy
  • Engineering
  • Fabrication
  • Failure Mode And Effect Analysis
  • Films
  • Heat Of Formation
  • Materials
  • Materials Science
  • Microscopy
  • Scanning Electron Microscopy
  • Spectroscopy
  • Transition Metals

Fields of Study

  • Materials science

Readers

  • Surface Coatings Technology.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene