Study for the Determination of General and Specific Properties of Wide Energy-Band Gap HgCdTe in the 1 to 2 Micrometer Wavelength Range.

Abstract

The second phase of this contract was dedicated to the optimization of the technical fabrication parameters of HgCdTe avalanche photodiodes in the 1.3 micron to 1.55 micron wavelength region. In addition, the electroluminescent properties and the technical feasibility of HgCdTe emitters were investigated. The fabrication technology implemented for the deliverable avalanche photodiodes under this contract is planar.

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Document Details

Document Type
Technical Report
Publication Date
Jan 09, 1988
Accession Number
ADA191091

Entities

People

  • A. Durand
  • F. Raymond
  • M. Royer
  • Thanh Nguyen

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Avalanche Photodiodes
  • Band Gaps
  • Communication Systems
  • Contracts
  • Diodes
  • Energy Bands
  • Fabrication
  • Guard Rings
  • Materials
  • Measurement
  • Micrometers
  • Photodiodes
  • Quantum Efficiency
  • Semiconductors
  • Spin-Orbit Interaction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Directed Energy