Microscopic Control of Semiconductor Interface Reactivity.
Abstract
Executive Summary - The goal of our program is to control semiconductor surface and interface behavior by means of local modifications of the surface/interface chemical environment. Major thrust areas include the use of ultrathin catalyst layer to promote low temperature oxidation and nitridization of semiconductor surfaces, the search for passivating layers to reduce metallization corrosion, and the exploitation of diffusion barrier effects to control interdiffusion at metal-semiconductor junctions. Such studies have potential implications for low temperature synthesis of gate and field oxides, and for enhancing metallization stability against corrosion and electromigration.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1988
- Accession Number
- ADA191193
Entities
People
- A. Franciosi
Organizations
- University of Minnesota