Micro-Raman Analysis of Dielectric Optical Thin Films.
Abstract
Wide-band-gap dielectric thin films up to 6 micrometer in thickness are characterized by spontaneous and stimulated Raman-gain microscopy. Materials surveyed are Aluminum oxide, Yttrium oxide, Zirconium oxide, Hafnium oxide, and Tantalum oxide. 1-micrometer sized surface defects on Y2O3 are investigated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 07, 1988
- Accession Number
- ADA191228
Entities
People
- Ansgar Schmid
Organizations
- University of Rochester