Instrumentation for Ultrafast Electronics.
Abstract
Increasing numbers of III-V compound semiconductor devices and circuits operate in a regime where internal node testing with traditional electronic means proves impossible due to circuit loading and limited time resolution. Electrooptic sampling employs picosecond infrared laser pulses to non-invasively examine internal node voltages with 100 GHz bandwidth. Under this grant, a very low phase noise synthesizer was purchased to provide stable drive to the laser mode-locker, and a microwave synthesizer was purchased to drive the device under test up to 40 GHz. In addition, a computer aided design graphics workstation was purchased to permit the design of novel ultrafast devices. In-house design, fabrication, and detailed diagnostic testing of ultrafast III-V integrated circuits are now all possible at this unique facility.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 1987
- Accession Number
- ADA191379
Entities
People
- D. M. Bloom
Organizations
- Stanford University