Submicron Phonoics II.
Abstract
Results to implement non-equilibrium phonon distributors into a conventional Monte Carlo electron transport simulation are report. A new code for a simulation of the simplified model of low-temperature steady-state acoustic phonon-electron transport in GaAs has been developed and applied. This model has been extended to a fully time-dependent (transient) calculation of optical phonon interactions with near ballistic electrons in n-GaAs in the overshoot regime at room temperature (1) by modifying standard Monte Carlo codes to accommodate the numerical procedures required for nonequilibrium phonon calculations and by applying these to real device phenomena such as picosecond response in n-GaAs to a high field pulse. Keywords: Austria, Gallium arsenide, Phonon; Phonon-electron interaction; Device modelling; Nonequilibrium phonon model, Semi-conductor transport.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 30, 1987
- Accession Number
- ADA191538
Entities
People
- P. Kocevar
Organizations
- University of Graz