An Investigation of II-VI Superlattice Deposition by Laser Photochemical Techniques.
Abstract
The objectives of this research program are to develop metalorganic chemical vapor deposition (MOCVD) techniques for Manganese-bearing II-VI ternary compounds epitaxially grown on Gallium Arsenide substrates, and to explore the usefulness of UV laser assist for deposition for superlattice structures of wider bandgap II-VI binary compounds. For the first time, high quality single-crystal (111) Cd1-xMnxTe was grown by conventional MOCVD on (100) GaAs wafers with high resolution cross-selectional transmission electron microscopy was used for structural characterization, showing atomically abrupt interfaces, but different microstructures within the epi-film depending on growth temperature. UV adsorption spectra of a number of metalalkyl sources for Cadmium, Zinc, Selenium, and Tellurium were measured and optical adsorption cross sections calculated. Preliminary depositions of Cadmium Telluride and Zinc telluride films on glass substrates were mase at 200 C with UV excitation provided by an excimer gas laser operating at 193 nm and by using a parallel beam geometry. Some optical and X-ray diffraction data are presented as well as a description of the low pressure laser photochemical deposition system. Keywords: UV Photolysis, Superlattices, Thin films, Epitaxy, II-VI Semiconductors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1988
- Accession Number
- ADA191547
Entities
People
- Akbar Nouhi
- Gouri Radhakrishnan
- Richard J. Stirn
Organizations
- Jet Propulsion Laboratory