Planar Fully Ion-Implanted High Power InP MISFETs.
Abstract
Planar fully ion-implanted InP power MISFETs using SiO2 as the gate insulator have been fabricated. At 9.7 GHz CW with 3.7 dB gain 800 micron gate width devices exhibited power per unit gate width as high as 2.9 W/mm, more than twice the highest value ever reported for GaAs FETs. For comparison at the same CW frequency and 4 dB gain our 1 mm gate width mesa-type epitaxial InP power MISFETs have demonstrated power per unit gate width as high as 4.5 W/mm, more than three times the highest GaAs value.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1987
- Accession Number
- ADA191589
Entities
People
- D. A. Collins
- L. J. Messick
- R. Nguyen