Defects in High-Mobility Semiconductor Systems.
Abstract
Initial work under subject contract was devoted to (a) assembling and calibrating essential electrical, optical, and spectroscopic measurement facilities needed for analysis of defects in high-mobility structures; (b) application of such measurement systems to study of basic defects in previously characterized materials, in order to validate techniques and also to verify and extend our understanding of the physics of such basic defects; and (c) initiation of fabrication of critical test samples comprising heterostructures and superlattices of GaAs and Si and Ge.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 23, 1987
- Accession Number
- ADA191618
Entities
People
- Hermann Grimmeiss
Organizations
- Lund University