Program Plan and Fabrication Specification for the 'Supply of Experimental RADFET (Radiation Sensitive Field Effect Transistor) Dosimeters.'

Abstract

The first periodic report is a technical planning document setting out test procedures plus a fabrication specification for p-channel Metal - Oxide - Silicon dosimeters, of an experimental type known as RADFETs. Keywords: Metal oxide semiconductors; Field effect transistors; Radiation sensitivity; Great Britain.

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Document Details

Document Type
Technical Report
Publication Date
Jul 27, 1987
Accession Number
ADA191619

Entities

People

  • Andrew Holmes-siedle

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Contracts
  • Dosimeters
  • Dosimetry
  • Electronics
  • Electronics Laboratories
  • Fabrication
  • Field Effect Transistors
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Oxide Films
  • Oxides
  • Radiation
  • Semiconductors
  • Specifications
  • Standards
  • Thickness
  • Transistors

Fields of Study

  • Education
  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics