Studies of Metal-Silicon, Silicon-Metal, and Silicide Based Interfaces: Synchrotron Radiation Photoemission and Inverse Photoemission Investigations of Interface Formation and Compound Nucleation.

Abstract

This report summarizes a three-year investigation of metal/semiconductor interface formation. Highlights for the 21 refereed papers are included, together with copies of feature articles published in Physics Today and The American Scientist which cite support from ARO. Keywords: Metal/Semiconductor; Interfaces; Synchrotron radiation photoemission; Inverse photoemission; Compound nucleation.

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Document Details

Document Type
Technical Report
Publication Date
Jan 15, 1988
Accession Number
ADA191808

Entities

People

  • John H. Weaver

Organizations

  • University of Minnesota

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electrons
  • Chemical Engineering
  • Chemistry
  • Composite Materials
  • Electron Emission
  • Electron Energy
  • Heat Energy
  • Materials
  • Materials Science
  • Measurement
  • Military Research
  • Semiconductors
  • Soft X Rays
  • Solid State Physics
  • Spectra
  • Synchrotron Radiation
  • Transitions

Fields of Study

  • Physics

Readers

  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene