Infrared Devices Using Semiconductor Quantum Wells.
Abstract
We describe in this memo the results of a preliminary calculation which shows how the intersubband optical transition in III-V quantum wells may be used as the basis for research into a family of infrared devices. In particular, we show that resonating the transition with a surface plasmon or with a guided mode in a semiconductor-quantum well- metal structure can enhance its optical effects by roughly a factor of 50. This allows only 4x10 to the 12th power carriers per sq. cm to effect total absorption of the incoming radiation. Such a density can be controlled electrostatically and so the transition may be switched by applying a bias to the (Shottky) metal; thus we have an efficient electronic modulator for the 10 micron band. Intersubband absorption should, in addition, show significant photoconductivity and so the device might prove a reasonable infrared detector. Finally, an important consideration of this device is that it is built epitaxially using wide band gap semiconductors. The possibilities, therefore, of substantial monolithic integration are considerable and we allow ourselves some speculation on the types of device which may be possible.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1987
- Accession Number
- ADA191887
Entities
People
- M. J. Kane
- N. Apsley
Organizations
- Royal Signals and Radar Establishment