Fabrication of Polysilicon Gate FET in Laser Melted Silicon on Silicon Dioxide on PLZT,
Abstract
N-channel Polysilicon gate FETs have been fabricated in a laser-melted silicon-on-SiO2-on PLZT structure. Channel mobilities in the devices are 50 sq. cm/Vs with threshold and source-to-drain breakdown voltages as expected from the dielectric thickness and channel doping used. PLZT wafers subjected to the same processing temperatures still show an excellent electro-optic effect. Keywords: Polysilicon gate, Field effect transistors, Ferroelectric materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1987
- Accession Number
- ADA191902
Entities
People
- M. L. Burgener
- T. H. Lin