Development of the Field-Induced Electron Injection and Impact Ionization (F4I) Technique for Radiation Hardness Testing of MOS (Metal-Oxide-Semiconductor) Gate Insulators.

Abstract

Results are presented of an effort to develop an all-electrical means for simulating the effects of ionizing radiation on the radiation-sensitive oxide layers of metal-oxide-semiconductor (MOS) microelectronic devices. The report describes the field-induced electron injection and impact ionization (F4l) technique, its successful demonstration, and successful correlation of F4l test results with conventional radiation hardness tests using an ionizing radiation source (60Co). Also described are the development and operation of a microcomputer-controlled test system that permits semiautomatic application of the F4l test to circuit test structures. Keywords: Hardness assurance, Fowler Nordheim tunneling, Impact ionization, Hole trapping, Interface traps, Radiation effects.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1988
Accession Number
ADA192114

Entities

People

  • Harold E. Boesch Jr.

Organizations

  • Harry Diamond Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Computer Programming
  • Computers
  • Current Amplifiers
  • Diagrams
  • Electronics
  • Energy Bands
  • Hardness
  • Integrated Circuits
  • Ionization
  • Ionizing Radiation
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Military Research
  • Radiation
  • Semiconductors
  • X Rays

Fields of Study

  • Engineering
  • Physics

Readers

  • Nuclear and Radiation Engineering.
  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics