Joint Services Electronics Program Research in Electronics.
Abstract
This program was designed to investigate the fundamental properties of ultrathin layers and the devices that would be fabricated from them. We have concentrated our investigations on the influence of growth conditions on the interfaces between AlGaAs and GaAs and the effect these properties have upon device performance. This has allowed us to optimize the techniques for interface formation to the point that low interface state densities can be achieved for both normal and inverted heterojunctions. We have also determined the optimal conditions for the growth of quantum well structures and have achieved state of the art low temperature PL linewidths for MOCVD-grown quantum wells (QW). We also investigated and analyzed the design of heterojunction bipolar transistors during the course of this program. Our studies pointed out that a significant opportunity to increase the capabilities of bipolar circuits through the use of complementary device designs had been overlooked. We developed a methodology for device analysis that showed that Pnp HBT's could be designed that were comparable in performance to the Npn designs used by most workers. The realization of this analysis would allow designers to consider low power complementary bipolar circuits in GaAs for the first time. We have proceeded to fabricate Pnp devices that show the expected performance and will continue to optimize them until the current program ends.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 31, 1987
- Accession Number
- ADA192206
Entities
Organizations
- University of Southern California