Integrated Optoelectronic Circuits Utilizing InGaAsP Grown by Molecular Beam Epitaxy (Erbium Doping of MBE GaAs).

Abstract

A study of erbium doping of molecular beam epitaxy(MBE) grown gallium arsenide layers was initiated. In the present work, the low temperature photoluminescence of Er in GaAs was confirmed and the growth conditions necessary to produce Er doped layers were established. Secondary ion mass spectrometry (SIMS) data on the MBE grown GaAs:Er doped layers confirm the presence of Er in the layers and the increase in Er doping with source temperature. Photoluminescence measurements on three samples of MBE grown GaAs: Er layers were very interesting. There is no evidence of any broad background which is observed in ion-implanted samples. The intense and sharply structured photoluminescence of MBE grown Er doped GaAs centered around 1.54 microns has been confirmed.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1987
Accession Number
ADA192269

Entities

People

  • E. L. Meeks

Organizations

  • Georgia Tech Research Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Ceramic Materials
  • Compound Semiconductors
  • Intensity
  • Ion Beams
  • Ion Implantation
  • Ions
  • Low Temperature
  • Mass Spectrometry
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Photoluminescence
  • Spectrometry
  • Vacuum
  • Vapor Pressure

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics