Defects in High-Mobility Semiconductor Systems.

Abstract

Work under subject contract was continued in the period 23 Oct thru 23 Dec 1987 on (a) extensive electrical examination of the Pb center on silicon surfaces; (b) preliminary electrical investigation of the new metastable gallium arsenide (GaAs) defect which competes with the EL-2 center; (c) initial EPR measurements on a high ceramic superconductor; (d) related conceptual studies and tests. (a) The photocapacitance system described in the First Interim Report was applied to an extensive study of the Pb center on oxidized silicon (SI) surfaces. This center is the most important defect in integrated circuit technology, and serves as an ideal reference for study of other less-well characterized defects.

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Document Details

Document Type
Technical Report
Publication Date
Dec 23, 1987
Accession Number
ADA192298

Entities

People

  • Hermann Grimmeiss

Organizations

  • Lund University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Conduction Bands
  • Critical Temperature
  • Electrons
  • Energy Bands
  • Energy Levels
  • Excitation
  • Gallium Arsenides
  • Hyperfine Structure
  • Instrumentation
  • Integrated Circuits
  • Materials
  • Physics
  • Point Defects
  • Semiconductors
  • Solid State Physics
  • Valence Bands

Readers

  • Clinical Trial Research.
  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Microelectronics