NDP (Neutron Depth Profiling) Evaluations of Boron-Implanted Compound Semiconductors,

Abstract

This report describes recent neutron depth profiling (NDP) experiments on the distribution of implanted boron in several semiconductors. The objectives are to compare the boron profiles for different materials that had been simultaneously implanted and to assess the effects of annealing treatments that were used to remove implant damage and electrically activate the boron. Keywords: Ion implants, Compound semiconductors, Neutron depth profiling.

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Document Details

Document Type
Technical Report
Publication Date
Mar 04, 1988
Accession Number
ADA192306

Entities

People

  • John F. Knudsen
  • R. G. Downing
  • Robert C. Bowman Jr.

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Air Force Facilities
  • Analytical Chemistry
  • Chemical Compounds
  • Chemistry
  • Classification
  • Compound Semiconductors
  • Electronics
  • Ion Implantation
  • Ions
  • Materials
  • Optoelectronic Devices
  • Security
  • Semiconductor Devices
  • Semiconductors
  • Standards
  • Test And Evaluation

Fields of Study

  • Materials science

Readers

  • Oceanography.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene