Hydrogen Response of Palladium Coated Suspended Gate Field Effect Transistor.
Abstract
A suspended metal gate field effect transistor was studied as a hydrogen sensor and the surface processes at an electrochemically deposited Pd layer on the gate were examined. It has been found that the time constant as well as the magnitude of the response depends on the operating conditions particularly on the presence of oxygen. If the device is tested in air the dynamic range spans logarithmically five decades of partial pressure of hydrogen.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 30, 1986
- Accession Number
- ADA192322
Entities
People
- Jiri Janata
- John Cassidy
- Stanley Pons
Organizations
- University of Utah