Near Ultraviolet-Visible-Near Infrared Optical Behavior of Sputter Deposited GeO(x) (1.85 = x = 2.30),

Abstract

This paper describes the reactive sputter deposition and optical characterization of GeOx where x lies between 1.85 and 2.30. The films were grown by sputtering a Ge target in 02-bearing atmospheres containing 0 to 80% Ar. Films deposited in 0 to 60% Ar were nominally germania. However, transmission in the UV-visible, the strength of the 245nm defect center, the optical absorption coefficient, and the optical energy band gap were strongly influenced by the presence of Ar in the discharge. Films deposited in gas containing 80% Ar were substoichiometric germania.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 1987
Accession Number
ADA192394

Entities

People

  • Carolyn R. Aita
  • Curt N. Sayers
  • Michel E. Marhic

Organizations

  • University of Wisconsin–Milwaukee

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Absorption
  • Absorption Coefficients
  • Abstracts
  • Band Gaps
  • Chemical Analysis
  • Diffraction
  • Energy Bands
  • Films
  • Materials Science
  • Measurement
  • Optical Absorption
  • Radiation
  • Refraction
  • Refractive Index
  • Scattering
  • Spectroscopy
  • X Rays

Fields of Study

  • Materials science

Readers

  • Aerospace Propulsion Engineering.
  • Semiconductor Device Technology
  • Spectroscopy.