A Planar IC-Compatible Transferred Electron Device for Millimeter-Wave Operation.

Abstract

During the first period of the contract a computer program has been adapted for use on an HP 9836CS desk computer. The device fabrication processes are presently being developed in order to improve yield. Reactive ion etching has been found to be of key importance for fabricating the overlapping gate cathode contact which is the key feature of the FECTED. Standard microstrip circuits have been designed and fabricated for testing the devices at Ka-band (26-40GHz). Keywords: Computer simulation; Field effect control; Transferred electron devices; Device fabrication; Reactive ion etching; Microstrip circuits.

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Document Details

Document Type
Technical Report
Publication Date
Oct 31, 1986
Accession Number
ADA192700

Entities

People

  • Hartwig W. Thim

Organizations

  • Johannes Kepler University Linz

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Computer Programs
  • Computer Simulations
  • Computers
  • Contracts
  • Electrons
  • Etching
  • Fabrication
  • Gunn Diodes
  • Ka Band
  • Metal Contacts
  • Millimeter Waves
  • Reactive Ion Etching
  • Simulations
  • Standards
  • Two Dimensional

Readers

  • Electronics Engineering
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • 5G
  • Microelectronics
  • Microelectronics - Graphene