A Planar IC-Compatible Transferred Electron Device for Millimeter-Wave Operation.
Abstract
Computer simulations have revealed that FEDTEDs operate with high efficiencies of approx. 9% at lower doping levels 5 times 10 to the 15th power/cc but in a very narrow range of RF/DC voltage levels. Lower efficiencies (3%-6%) are obtainable with doping levels of 2 to 3 times 10 to the 16th power/cc in a much broader range of RF/DC voltages. Experimental results obtained with a new batch of devices made from epitaxially grown layers with N sub D 2.5 times 10 to the 16th power/cc and d=0.9 micrometers are now very encouraging as, for the first time, broad band gain of several db from 26 - 30 GHz and, when loaded with a dielectric resonator output power levels of 10mw with 1.2% efficiency at 29.7 GHz have been obtained. Both, improved device technology and optimized stripline circuitry are made responsible for the improved performance. Future work will concentrate on pushing efficiencies up by a factor of 5 and on optimizing circuitry for 35 GHz operation. Keywords: Field effect controlled transferred electron devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1987
- Accession Number
- ADA192702
Entities
People
- Hartwig W. Thim
Organizations
- Johannes Kepler University Linz