Preparation and Characterization of SnS2.

Abstract

Single crystals of stannous sulfide(SnS2) crystallizing with the hexagonal cadmium iodide(CdI2) structure, have been grown by vapor transport and chemical vapor transport. Electronic, optical and infrared properties have been studied, as well as thermal stability in flowing oxygen. The impact on the electrical properties of slight deviations from stoichiometry and halogen impurity were investigated. Crystals free of halogen impurity can be grown by vapor transport. The sign of the majority carriers of crystals grown by vapor transport is dependent upon the growth conditions. If higher growth temperatures are used (750-700 C), vapor grown crystals are n-type semiconductors and exhibit low resistivities. Annealing of vapor grown crystals in sulfur at 600 C increases the resistivity. When the charge-growth temperatures are lowered to 650-600 C and 5% excess sulfur is included in the charge, the crystals are p-type semiconductors with high resistivities.

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Document Details

Document Type
Technical Report
Publication Date
Mar 15, 1988
Accession Number
ADA192914

Entities

People

  • Aaron Wold
  • J. Dicarlo
  • K. Kourtakis
  • Kirby Dwight
  • Robert N. Kershaw

Organizations

  • Brown University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Diffraction
  • Electrical Properties
  • Energy Bands
  • Infrared Spectra
  • Materials
  • Measurement
  • Military Research
  • N Type Semiconductors
  • Scattering
  • Security
  • Semiconductors
  • Single Crystals
  • Spectra
  • Temperature Gradients
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene