Microwave Amplifiers.
Abstract
A two-dimensional model for GaAs MESFET has been developed to study its linear and nonlinear microwave performances. The I-V characteristics curves for the intrinsic GaAs MESFET are obtained and compared with those for experimental measurements. Scattering parameters are calculated using the complete microwave model, which includes the intrinsic model and the parasitic elements, and compared with experimental findings. Reasonably good agreement between our calculation and the experimental measurements are obtained. Microwave nonlinear performances for a GaAs MESFET are simulated based on the large signal model. The microwave ouput signal in the time domain is simulated with two large input signals of different frequencies. Then the output power at the fundamental, first-order, second-order, and third-order harmonics are obtained. The power gains for the fundamental and the third-order spur at different bias points are calculated. Various HEMT models have been investigated. Three analytical models, the classical Fermi-Dirac, the two-level two-dimensional Electron Gas (2DEG) and the extended 2DEG models, are employed to study the electron concentration at the heterointerface where the electrons have very high mobility which is responsible for the ultra-fast transistor action due to the separation of electrons and ionized donors. Finally, the microwave applications of the quantum-well Stark effect are investigated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 25, 1988
- Accession Number
- ADA192974
Entities
People
- D. Ahn
- S. L. Chuang
- Seh Wook Lee
- Seung Mok Lee
Organizations
- University of Illinois Urbana–Champaign