Focused Ion Beam Fabrication of Graded Channel Fet's in GaAs and Si.

Abstract

The goal of this research is to exploit the novel capability of the focused ion beam to implant dopants whose density is a function of the lateral position. Thus, Field Effect Transistors in Gallium Arsenide and Silicon can be fabricated with a gradient of doping from source to drain. We have fabricated and tested such graded FET's in GaAs and have fabricated Si devices up to the point of focused ion beam implantation. In addition, programs for modeling the devices on the computer have been written. Recently, we have conceived and fabricated a new device: a tunable Gunn oscillator which makes use of doping gradients. To carry out these implantations, we have further developed the performance of our focused ion beam machine.

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Document Details

Document Type
Technical Report
Publication Date
Feb 03, 1988
Accession Number
ADA193098

Entities

People

  • John Melngailis

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Human Systems

DTIC Thesaurus Topics

  • Beam Steering
  • Circuits
  • Computer Science
  • Computer-Aided Design
  • Computers
  • Diodes
  • Fabrication
  • Field Effect Transistors
  • Frequency
  • Frequency Shift
  • Gunn Diodes
  • Integrated Circuits
  • Ion Beams
  • Ions
  • Program Management
  • Spectrum Analyzers
  • Technical Information Centers

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics