Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface.

Abstract

The formation of the thin silicon dioxide (SiO2) films via thermal oxidation on single crystal silicon substrates has been found to depend on the method of Si cleaning, impurities on the Si surface, the Si crystal orientation, film stress, and the availability of electrons at the Si surface. Recent studies on these topics are recounted along with a framework for understanding. No fully acceptable model for thin Si02 formation yet exists, but recent studies lead in new directions towards this goal.

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Document Details

Document Type
Technical Report
Publication Date
Mar 25, 1988
Accession Number
ADA193176

Entities

People

  • Eugene A. Irene

Organizations

  • University of North Carolina at Chapel Hill

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Chemical Analysis
  • Chemistry
  • Electronic States
  • Electrons
  • Equations
  • Films
  • Hydrophobic Properties
  • Military Research
  • North Carolina
  • Oxidation
  • Oxides
  • Silicon Dioxide
  • Steady State
  • Surface Energy
  • Surface Tension
  • Thermionic Emission
  • Viscous Flow

Readers

  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene