Picosecond Transient Reflectivity of Unpinned Gallium Arsenide (100) Surfaces.
Abstract
Surface recombination was measured for photowashed and unwashed gallium arsenide using picosecond transient photoreflectance methods. The results for the washed surfaces clearly demonstrate slow surface recombination that is accurately described by an ambipolar diffusion model. The fast decay observed for unwashed samples implies rapid surface recombination involving a more complex mechanism. Keywords: Fermi level pinning, Pinned surfaces, Doping, Dye lasers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1988
- Accession Number
- ADA193242
Entities
People
- John E. Wessel
- Steven M. Beck
Organizations
- The Aerospace Corporation