Paramagnetic Point Defects in Boron-Implanted Hg0.7Cd0.3Te.
Abstract
The initial observations of electron paramagnetic resonance (EPR) spectra from Hg0.7Cd0.3Te and CdTe after implantation with boron ions are described in this report. Sharp and nearly isotropic EPR signals with the free electron g-values were easily detected at low temperatures (= or > 78 K) when the boron ion implant dose was 1 x 10 to the 16th power ions/sq cm or larger. For identical implant conditions, more intense signals and narrower peaks were obtained from Hg0.78Cd0.3Te samples than from CdTe samples. However, the g-factors for all implanted Hg(1-x)Cd(x)Te samples appear to be equivalent and are similar to the values reported for the dangling-bond defects in other ion-implanted semiconductors. The EPR spectra produced by the boron implants do not correspond to either the degenerate conduction electron bands that form in ion-implanted Hg(1-x)Cd(x)Te or to the shallow donor states previously found in chemically doped CdTe. When implanted crystals are cooled below 4 K, partially resolved, two-component lineshapes are observed at some orientations. Increasing the temperature causes these two-component lines to collapse into nearly Lorentzian lineshapes with temperature-dependent widths. This behavior is consistent with a thermally activated process by which the paramagnetic spins hop between different locations. Keywords: Cadmium telluride, Mercury cadmium telluride.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1988
- Accession Number
- ADA193276
Entities
People
- E. L. Venturini
- Robert C. Bowman Jr.
- S. N. Witt
Organizations
- The Aerospace Corporation