Migration and Stability of HgCdTe Lattice Defects.

Abstract

Continuing from our previous work on equilibrium phase diagrams of Hg-Cd-Te systems, diffusion of Hg and Cd in HgCdTe has been studied in this project. The path probability method (PPM) of irreversible statistical mechanics is used with a point as the basic cluster. Basic formulation of diffusion: A gradient of atomic density is applied to the system and the responding atomic flux is formulated. It is noteworthy to see that chemical potential gradient appears quite naturally as the driving force, as the Onsager theory requires, rather than the atomic density gradient. Hg fast diffusion: It is made of two branches. In the vacancy mechanism branch, diffusion decreases with Hg vapor pressure, P(Hg), while it increases in the interstitial mechanism branch. Equations are derived to show these branches and curves for the diffusion coefficient are plotted. Experimentally observed activation energy is given atomic interpretation.

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Document Details

Document Type
Technical Report
Publication Date
Feb 29, 1988
Accession Number
ADA193293

Entities

People

  • Ryoichi Kikuchi

Organizations

  • University of Washington

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Advanced Materials
  • Compound Semiconductors
  • Crystal Structure
  • Differential Equations
  • Diffusion
  • Diffusion Coefficient
  • Diffusion Theory
  • Engineered Materials
  • Equations
  • Materials
  • Materials Engineering
  • Materials Science
  • Partial Pressure
  • Phase Diagrams
  • Probability
  • Statistical Mechanics
  • Vapor Pressure

Fields of Study

  • Materials science

Readers

  • Calculus or Mathematical Analysis
  • Materials Science and Engineering.