Metalorganic Chemical Vapor Deposition and Its Application to the Growth of the Heterostructure Hot Electron Diode.

Abstract

Metalorganic chemical vapor deposition (MOCVD) is an epitaxial crystal growth technique capable of producing high-quality compound semiconductors in thick or thin layers with abrupt junctions, excellent areal uniformity, and precisely controlled thickness, doping and composition. In this work the desired characteristics of an MOCVD system are described, and design criteria necessary for their implementation are identified. Special emphasis is placed on defensive design strategies intended to limit the extent of system perturbation due to various component failure modes and normal maintenance procedures. The design of reactor computer control software is also considered, and algorithms for the growth of layers graded in both doping and composition are presented.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1988
Accession Number
ADA193333

Entities

People

  • Mark A. Emanuel

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics
  • Biomedical
  • Energy and Power Technologies
  • Ground and Sea Platforms

DTIC Thesaurus Topics

  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Computer Programming
  • Computer Programs
  • Computers
  • Control Systems
  • Crystal Growth
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Modules (Electronics)
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Warning Systems

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene