Silicon-on-Insulator Pin Diodes.
Abstract
Microwave monolithic integrated circuit (MMMIC) technology using recrystallized silicon-on-insulator substrates would permit PIN diode phase shifters to be fabricated with higher power-handling capability and lower insertion loss than conventional MMIC control circuits using GaAs MESFETs. Moreover, at frequencies below 10 GHz, where substrate area requirements can be extensive, the silicon-on-insulator substrate technology can be less expensive. The research program stresses recrystallization of silicon-on-alumina films, followed by growth of silicon epitaxial layers and fabrication of surface-oriented PIN diodes. In the second year of the program, we have accomplished the following: (1) Recrystallization of silicon-on-alumina with various encapsulation and stress-relief layers, using both an electron-beam system and a graphite strip heater; (2) Evaluation of the effect of stress on film quality, which indicates directions for improved device-quality films; (3) Design and initial fabrication of surface-oriented PIN diodes on single crystal silicon to demonstrate device design concept; (4) Evaluation of future directions for the research program. This report covers the second-year results. Particularly noteworthy is the first recrystallization of silicon-on-alumina films and the first fabrication of surface-oriented PIN diodes with doped polysilicon handles for P+ and N+ injecting contacts.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1987
- Accession Number
- ADA193359
Entities
People
- Edward W. Maby
- Ronald J. Gutmann
- Stephen Wu
- Ted Letavic
Organizations
- Rensselaer Polytechnic Institute