Studying the Physics and Operation of Multi-Terminal Near-Micron and Sub-Micron Length, Hot Electron Semiconductor Devices.

Abstract

The study encompasses a broad examination of transport in submicron and near-micron semiconductor devices through implementation of the moments of the Boltzmann transport equation and the semiconductor drift and diffusion equation. The study utilized advanced algorithms developed at Scientific Research Associates, and recommends development of a network of user based algorithms for closely combined theoretical/experimental interactions. Keywords: Boltzmann transport, Transients, Overshoot, Gallium arsenides, Silicon.

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Document Details

Document Type
Technical Report
Publication Date
Feb 15, 1988
Accession Number
ADA193380

Entities

People

  • B. J. Morrison
  • H. L. Grubin
  • J. P. Kreskovsky
  • M. Meyyappan

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies
  • Weapons Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Boltzmann Equation
  • Compound Semiconductors
  • Computational Science
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Current Density
  • Electronics Industry
  • Electronics Laboratories
  • Energy Bands
  • Energy Transfer
  • Fermi Levels
  • Field Effect Transistors
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Three Dimensional

Readers

  • Computer Engineering
  • Integrated Circuit Design and Technology.
  • Plasma Physics.

Technology Areas

  • Microelectronics