Electrooptical Devices.
Abstract
GaInAsP/InP buried-heterostructure lasers formed by thermally transported InP have resulted in low threshold, high efficiency, and high device yield. Zinc diffusion has been utilized to improve the light-current linearity and reduce the threshold temperature dependence. A technique has been developed to calculate the voltage and current distributions in the mass-transported GaInAsP/InP buried-heterostructure lasers. It is valuable for designing lasers for operation without current leakage through the InP pn homojunctions formed in the transported regions. Mass-transported GaInAsP/InP buried-heterostructure lasers with low threshold currents and a linear light output to greater than 13 mW per facet have been obtained. This is achieved by using sufficient p-doping in the cap layer of the starting double-heterostructure wafer. Buried- heterostructure, actively Q-switched diode lasers have been made with threshold currents as low as 14 mA. The lasers operate continuously at room temperature. Full on/off modulation has been observed at measurement-limited rates of about 12.6 GHz while modulation has been seen at rates of 13.5 GHz. The InP mass- transport technique has been used to improve chemically etched mirrors for GaInAsP/InP buried-heterostructure lasers. Devices with one such mirror and a second cleaved mirror show high device yield, thresholds currents as low as 5 MA, and differential quantum efficiency as high as 33 percent. Keywords: Electrooptical devices, Buried heterostructure, Double heterostructure, Etched mirror laser, Diode lasers, GaInAsP/InP lasers.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 30, 1984
- Accession Number
- ADA193438
Entities
People
- Dean Z. Tsang
- Richard C. Williamson
Organizations
- Massachusetts Institute of Technology