Electrooptical Devices

Abstract

The small-signal frequency response of small-contact mass-transported buried-heterostructure lasers with minimal parasitic contact pad capacitance has been measured. Initial results show that the highest relaxation frequency of 5 GHz is obtained in long lasers with high optical power. GaInAsP/InP buried- heterostructure lasers fabricated on p-InP substrates offer considerable advantages in terms of reduced series resistance because of the large-area p- contact. A simple formula has been derived from permits an accurate calculation of the spreading resistance in the p-InP. Keywords: Gallium arsenides, Indium phosphides.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1986
Accession Number
ADA193446

Entities

People

  • Dean Z. Tsang
  • Richard C. Williamson

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Capacitance
  • Classification
  • Detectors
  • Electrical Impedance
  • Electrical Resistance
  • Frequency
  • Frequency Response
  • Impedance
  • Insertion Loss
  • Laser Diodes
  • Massachusetts
  • Resistance
  • Resonant Frequency
  • Test Sets
  • United States

Fields of Study

  • Engineering
  • Materials science

Readers

  • Semiconductor Device Technology
  • Spectroscopy.

Technology Areas

  • Directed Energy
  • Microelectronics