Lattice-Matched HgZnTe Epitaxy Development.

Abstract

The technical feasibility of growing HgZnTe on CdznTe for longwave infrared applications has been demonstrated in this Phase I program. Mercury Company has developed a technique for growing reproducible large area uniform HgZnTe. The proposed research was to focus on longwave infrared (LWIR) HzZnTe, and Mercury Company routinely achieves cutoff wavelengths of 7.0 to 10.6 microns at room temperature. High quality large area Cd(0.8)Zn (0.2)Te substrates were developed by Galtech Semiconductor Materials Corporation, Utah. High resolution surface and internal IR inspection of substrates was achieved using image analysis and techniques were developed that could lead to automated inspection. In addition, SEM capabilities were developed that could lead to automated inspection of epitaxy material. Keywords: Mercury, Cadmium, Tellurium, Zinc, Liquid phase epitaxy, Tellurium melt.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1988
Accession Number
ADA193677

Entities

People

  • David G. Ryding

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Corporations
  • Crystal Structure
  • Crystals
  • Detectors
  • Electron Microscopy
  • Epitaxial Growth
  • Liquid Phase Epitaxy
  • Materials
  • Materials Laboratories
  • Measurement
  • Microscopes
  • Microscopy
  • Phase Diagrams
  • Small Business
  • Standards
  • Temperature Control

Fields of Study

  • Materials science

Readers

  • Image Processing and Computer Vision.
  • Semiconductor Device Technology
  • Software Engineering

Technology Areas

  • Microelectronics