The VPE-Hydride Technique with Alloy Source; Equilibrium Analysis.
Abstract
An equilibrium analysis of the Vapor Phase Epitaxy(VPE)-hydride technique using an alloy source has been completed with the analysis method of Quinlan. Results of the analysis are in close agreement with the experimental findings of other investigators. The compositions of the InxGa(1-x)As are dependent on the alloy compositions, and the initial partial pressures of hydrogen chloride and arsenic. The indium content of the ternaries increases with increasing arsenic pressures below .001 atm and remains constant above this value. The analysis indicates that the lattice matched In(0.53)Ga(0.47)As can continually be prepared from the same alloy by changing the initial partial pressures of hydrogen chloride. Keywords: III-V Semiconductors; Indium compounds; Gallium arsenides.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1987
- Accession Number
- ADA194036
Entities
People
- Kenneth P. Quinlan
Organizations
- Rome Laboratory