Reaction Dynamics on Semiconductor Surfaces.

Abstract

The combined techniques of molecular beam relaxation spectroscopy and Auger electron spectroscopy have been used to study the reactions of H2 and O2 on clean iron surfaces and of Kr, H2 and O2 on clean silicon and germanium surfaces. Results include adsorption and permeation of H in iron, H2O formation on iron, oxidation of iron, volatilization of silicon and germanium in oxygen, krypton physisorption on germanium and H adsorption on silicon. Keywords: Hydrogen, Water surfaces, Chemistry, Kinetics, Molecular beam scattering, Adsorption, Semiconductors, Metals.

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Document Details

Document Type
Technical Report
Publication Date
Feb 28, 1988
Accession Number
ADA194305

Entities

People

  • John B. Hudson

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Chemical Reactions
  • Chemistry
  • Contracts
  • Desorption
  • Dynamics
  • Electron Spectroscopy
  • Engineering
  • Kinetics
  • Materials
  • Materials Engineering
  • Materials Science
  • Military Research
  • Semiconductors
  • Spectroscopy

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene