Computer Simulation of Electromigration in Thin Films.

Abstract

This report summarizes progress made toward computer simulation of the electromigration process in thin films. In particular it addresses the issues of forming a meaningful film, accounting for variations in the grain boundary energy and lattice mismatch, stress relaxations or annealing of the film, and mass flux within the film with and without a constraining overlayer. It incorporates vacancy concentration depended flux, but does not include the effects of void coalescence on the current density or temperature, and thus is an early life description. (Author)

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 1987
Accession Number
ADA194526

Entities

People

  • H. B. Huntington

Organizations

  • Rensselaer Polytechnic Institute

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Annealing
  • Classification
  • Coalescence
  • Computer Simulations
  • Computers
  • Contracts
  • Equations
  • Films
  • Grain Boundaries
  • Materials
  • Relaxation Time
  • Security
  • Simulations
  • Steady State
  • Thin Films
  • Time Intervals
  • Two Dimensional

Readers

  • Materials Science and Engineering.
  • Systems Analysis and Design
  • Thin Film Deposition Science.