Silicon, Oxygen Free.
Abstract
The absorption in Silicon for the 8 micron to 12 micron region depends on the amount of oxygen contamination in the sample and on the intrinsic or lattice vibrations of the sample. The oxygen contamination component can be eliminated if the total number of oxygen atoms/cc does not exceed 2 x 10 to the 17th power. As a starting point specification for optical silicon, the silicon should have no more than 2 x 10 to the 17th power oxygen atoms per cc. There is some evidence that controlled amounts of Germanium added to the silicon reduces the intrinsic absorption at 9 microns. Si may be substituted for germanium for thin lens applications. Si doped with Ge may be a suitable substitute for Ge for many applications.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1986
- Accession Number
- ADA194643
Entities
People
- Edward F. Allard