Interfacial Properties of Germanium Nitride Dielectric Layers on Germanium.

Abstract

The enclosed report represents work performed at UCSD on Contract N00014-84-K-0459 entitled, 'Interfacial Properties of Germanium Nitride Dielectric Layers on Germanium', and provides a full account of the results obtained during the contract period: July 1, 1985 to September 30, 1986. The paper, 'Growth of Amorphous Germanium Nitride Films by Indirect Plasma CVD', has been published in the JOURNAL OF THE ELECTROCHEMICAL SOCIETY, Volume 134, page 979 (1987). The remainder of this report describes additional unpublished results.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1986
Accession Number
ADA194702

Entities

People

  • L. G. Meiners

Organizations

  • University of California, San Diego

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • California
  • Capacitance
  • Dielectrics
  • Electrical Engineering
  • Electrical Measurement
  • Electrical Properties
  • Engineering
  • Fermi Levels
  • Films
  • Flow Rate
  • Germanium
  • Germanium Compounds
  • Hysteresis
  • Measurement
  • Physical Properties
  • Refractive Index
  • Universities

Readers

  • Business Analytics
  • Thin Film Deposition Science.