Numerical Simulation of the Function of Scientific Instrumentation for Measuring the Speed of Electron Devices.

Abstract

The feasibility of using numerical simulation to assess the function of scientific instrumentation for measuring the speed of electron devices has been demonstrated by obtaining (1) the dc characteristics of the VHEMT and PHEMT, (2) transient response of the PHEMT to picosecond voltage pulses superimposed on the gate. The drift and diffusion and Poisson's equations were solved in two dimensions. The HEMT and PHEMT demonstrated transconductance of 94 and 375 mS/mm, respectively. The transient response is strongly dependent on the pulse shape and duration.

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Document Details

Document Type
Technical Report
Publication Date
Mar 30, 1988
Accession Number
ADA194969

Entities

People

  • B. J. Morrison
  • H. L. Grubin
  • M. A. Osman

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Current Density
  • Diffusion
  • Electric Fields
  • Electron Density
  • Electron Gas
  • Electrons
  • Energy Bands
  • Equations
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Instrumentation
  • Sampling
  • Semiconductors
  • Simulations
  • Stratified Fluids
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics