Waveform Relaxation Applied to Transient Device Simulation,

Abstract

This paper investigates the possibility of accelerating the transient simulation of Metal Oxide Semiconductor devices by using waveform relaxation. Standard spatial discretization techniques are used to generate a large, sparsely-connected system of algebraic and ordinary differential equations in time. The waveform relaxation (WR) algorithm for solving such a system is described, and several theoretical results that characterize the convergence of WR for device simulation are given. In addition, one-dimensional experimental results are presented.

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Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1988
Accession Number
ADA194992

Entities

People

  • F. Odeh
  • J. White
  • John S. Allen
  • M. Reichelt

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Algorithms
  • Boltzmann Equation
  • Computer Science
  • Convergence
  • Current Density
  • Differential Equations
  • Diffusion Coefficient
  • Electric Fields
  • Electrical Engineering
  • Electrons
  • Equations
  • Partial Differential Equations
  • Poisson Equation
  • Semiconductor Devices
  • Semiconductors
  • Simulations
  • Two Dimensional

Fields of Study

  • Engineering

Readers

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Technology Areas

  • Microelectronics