MBE Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices
Abstract
A strong emphasis has been laid recently on the characterization of HgCdTe epilayers by double X ray rocking curve. A careful examination of what has been up to now reported is far from being conclusive. In fact what is claimed as world record is only one particular point on a crystal. Above all, nobody has presently established a clear relationship between the FWHM of X ray Rocking Curve peak and the electrical characteristics of this HgCdTe layer. We have just received our X ray equipment during the Summer 87 and have started our own investigations. What we have in mind is (1) to understand the relationship between FWHM of the substrate - FWHM of the epilayer, (2) to establish a relationship between FWHM mobility and carrier lifetime for a given HgCdTe MBE layer grown under very well established growth conditions. We have already characterized numerous substrates and HgCdTe epilayers grown in the (111) orientation on CdTe and CdZnTe substrates.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 15, 1987
- Accession Number
- ADA195172
Entities
People
- Jean-pierre Faurie
Organizations
- University of Illinois at Chicago